CHARACTERIZATION AND SUPPRESSION OF DRAIN COUPLING IN SUBMICROMETER EPROM CELLS

被引：24

作者：

PRALL, K

KINNEY, WI

MACRO, J

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1987.23336

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2463 / 2468

页数：6

共 13 条

[1] MODELING OF SMALL MOS DEVICES AND DEVICE LIMITS [J].

CHATTERJEE, PK ;

YANG, P ;

SHICHIJO, H .

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1983, 130 (03) :105-126

[2]

CHATTERJEE PK, 1980, IEEE ELECTRON DEVICE, V1

EITAN, B ;

FROHMANBENTCHKOWSKY, D .

[4]

Komori K., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P627

[5]

Mizutani Y., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P635

[6]

NICOLLIAN E, 1982, MOS PHYSICS TECHNOLO, P77

[7]

NISHI Y, 1981, APPLIED SOLID STA SA, V2

[8]

Ohya S., 1983, International Electron Devices Meeting 1983. Technical Digest, P570

[9]

SELBERHERR S, 1980, IEEE T ELECTRON DEVI, V27

[10]

Sheu B. J., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P300