THE EFFECT OF IMPLANT SPECIES ON DEFECT ANNEAL KINETICS .1. SILICON AND PHOSPHORUS IMPLANTATION

被引:12
作者
PRUSSIN, S [1 ]
JONES, KS [1 ]
机构
[1] UNIV CALIF BERKELEY,DEPT MAT SCI & MINERAL ENGN,BERKELEY,CA 94720
关键词
D O I
10.1016/0168-583X(87)90888-3
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:496 / 498
页数:3
相关论文
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  • [3] PRUSSIN S, 1986, MATERIALS ISSUES SIL, V71
  • [4] TRUMBORE FA, 1962, BELL SYST TECH J, V39, P210
  • [5] Willoughby A. F. W., 1981, Impurity doping processes in silicon, P1