PERFORMANCE OF ELECTROSTATIC AHARONOV-BOHM INTERFEROMETERS IN THE DIFFUSIVE REGIME

被引：14

作者：

BANDYOPADHYAY, S

POROD, W

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 23期

关键词：

D O I：

10.1063/1.100267

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2323 / 2325

页数：3

共 10 条

[1]

Bandyopadhyay S., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P76

[2] AHARONOV-BOHM EFFECT IN SEMICONDUCTOR MICROSTRUCTURES - NOVEL DEVICE POSSIBILITIES [J].

BANDYOPADHYAY, S ;

DATTA, S ;

MELLOCH, MR .

SUPERLATTICES AND MICROSTRUCTURES, 1986, 2 (06) :539-542

[3]

BANDYOPADHYAY S, 1988, UNPUB 4TH INT C SUP

[4] AHARONOV-BOHM EFFECT IN SEMICONDUCTOR MICROSTRUCTURES [J].

DATTA, S ;

BANDYOPADHYAY, S .

PHYSICAL REVIEW LETTERS, 1987, 58 (07) :717-720

[5] PROPOSED STRUCTURE FOR LARGE QUANTUM INTERFERENCE EFFECTS [J].

DATTA, S ;

MELLOCH, MR ;

BANDYOPADHYAY, S ;

LUNDSTROM, MS .

APPLIED PHYSICS LETTERS, 1986, 48 (07) :487-489

[6]

FROHNE R, UNPUB

[7] OBSERVATION OF THE AHARONOV-BOHM EFFECT FOR OMEGA-C-TAU GREATER THAN 1 [J].

TIMP, G ;

CHANG, AM ;

CUNNINGHAM, JE ;

CHANG, TY ;

MANKIEWICH, P ;

BEHRINGER, R ;

HOWARD, RE .

PHYSICAL REVIEW LETTERS, 1987, 58 (26) :2814-2817

[8] NORMAL-METAL AHARONOV-BOHM EFFECT IN THE PRESENCE OF A TRANSVERSE ELECTRIC-FIELD [J].

WASHBURN, S ;

SCHMID, H ;

KERN, D ;

WEBB, RA .

PHYSICAL REVIEW LETTERS, 1987, 59 (16) :1791-1794

[9]

WILLIAMS RE, 1987, GAAS PROCESSING TECH, pCH11

[10]

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