ELECTRONIC STATES OF IMPURITIES LOCATED AT OR NEAR SEMICONDUCTOR-INSULATOR INTERFACES

被引：47

作者：

LIPARI, NO

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1978年 / 15卷 / 04期

关键词：

D O I：

10.1116/1.569798

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1412 / 1416

页数：5

共 11 条

[1] BELL RJ, 1967, SURF SCI, V1, P293
[2] FOWLER AB, SURF SCI
[3] HARTSTEIN A, 1976, 13TH P INT C PHYS SE, P741
[4] KARPUSHIN AA, 1970, FIZ TVERD TELA+, V11, P1748
[5] CARRIER CONCENTRATION IN INVERSION LAYER OF A MOS FIELD-EFFECT TRANSISTOR
LAUR, J
JAYADEVAIAH, TS
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (05) : 644 - 646
[6] NODAL HYDROGENIC WAVE FUNCTIONS OF DONORS ON SEMICONDUCTOR SURFACES
LEVINE, JD
[J]. PHYSICAL REVIEW, 1965, 140 (2A): : A586 - &
[7] THEORY OF INDIRECT EXCITONS IN SEMICONDUCTORS
LIPARI, NO
ALTARELLI, M
[J]. PHYSICAL REVIEW B, 1977, 15 (10) : 4883 - 4895
[8] LIPARI NO, UNPUBLISHED
[9] MARTIN BR, UNPUBLISHED
[10] EXCITON GROUND-STATE IN STRONGLY ANISOTROPIC CRYSTALS
POLLMANN, J
[J]. SOLID STATE COMMUNICATIONS, 1976, 19 (04) : 361 - 364