REMOVAL OF ACCIDENTAL DEGENERACIES IN SEMICONDUCTOR QUANTUM WIRES

被引：31

作者：

SHERTZER, J ^{[1
]}

RAMMOHAN, LR ^{[1
]}

机构：

[1] WORCESTER POLYTECH INST,DEPT PHYS,WORCESTER,MA 01609

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.41.9994

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We obtain the energy levels of carriers in rectangular GaAs/Ga1-xAlxAs quantum-wire heterostructures with finite barriers using finite-element analysis. The energy spectra obtained are dramatically different from those determined analytically with use of the infinite-barrier approximation. The infinite-barrier approximation also introduces extra degeneracies in the energy spectra as a consequence of the separability of the potential. These accidental degeneracies are removed when the barrier height corresponding to the band offset of the surrounding medium is used in calculating the energy levels. Group-theory considerations of the square are used to explain the removal of these accidental degeneracies. © 1990 The American Physical Society.

引用

页码：9994 / 9999

页数：6

共 21 条

[1] SUPER-LATTICE BAND-STRUCTURE IN THE ENVELOPE-FUNCTION APPROXIMATION [J].