共 15 条
[1]
AIGRAIN P, 1952, ANN PHYS-PARIS, V7, P140
[2]
SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT
[J].
PHYSICAL REVIEW,
1947, 71 (10)
:717-727
[3]
EFFECTS OF ELECTRICAL FORMING ON THE RECTIFYING BARRIERS OF N-GERMANIUM AND P-GERMANIUM TRANSISTORS
[J].
PHYSICAL REVIEW,
1950, 77 (03)
:401-402
[4]
PULSE MEASUREMENT OF THE INVERSE VOLTAGE CHARACTERISTIC OF GERMANIUM POINT CONTACTS
[J].
PHYSICAL REVIEW,
1951, 81 (01)
:152-152
[5]
THE SURFACE-BARRIER TRANSISTOR .1. PRINCIPLES OF THE SURFACE-BARRIER TRANSISTOR
[J].
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS,
1953, 41 (12)
:1702-1706
[6]
BRAY R, 1950, PURDUE U Q PROGR REP, V8, P27
[7]
AREA CONTACTS ON GERMANIUM
[J].
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B,
1952, 65 (392)
:650-651
[8]
RESISTANCE OF GERMANIUM CONTACTS
[J].
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B,
1952, 65 (395)
:908-909
[9]
GUNN JB, 1954, UNPUB
[10]
GUNN JB, 1952, Patent No. 5413