MECHANISM OF OXIDATION OF TITANIUM DISILICIDE

被引：12

作者：

SCHWETTMANN, FN

GRAFF, RA

KOLODNEY, M

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1971年 / 118卷 / 12期

关键词：

D O I：

10.1149/1.2407889

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1973 / +

页数：1

共 19 条

[1] OPTICAL MEASUREMENT OF FILM GROWTH ON SILICON AND GERMANIUM SURFACES IN ROOM AIR [J].

ARCHER, RJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (10) :619-622

[2]

BERKOWIT.JB, 1965, T METALL SOC AIME, V233, P1093

[3]

BRACCO DJ, 1966, TR66126 AFML

[4] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].

DEAL, BE ;

GROVE, AS .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&

[5] SOLID SOLUTION OF TIO2 IN SIO2 [J].

EVANS, DL .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1970, 53 (07) :418-&

[6]

EVANS UR, 1960, CORROSION OXIDATION, P833

[7]

FELTEN EJ, 1968, ELECTROCHEM TECHNOL, V6, P438

[8]

GADD JW, 1965, AFMLTR65203 TECH REP

[9] GAS PERMEATION STUDY AND IMPERFECTION DETECTION OF THERMALLY GROWN AND DEPOSITED THIN SILICON DIOXIDE FILMS [J].

ING, SW ;

MORRISON, RE ;

SANDOR, JE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (03) :221-226

[10] STRUCTURAL EVALUATION OF SILICON OXIDE FILMS [J].

PLISKIN, WA ;

LEHMAN, HS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (10) :1013-&

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