ELECTRON-OPTICAL PHONON INTERACTIONS IN POLAR SEMICONDUCTOR QUANTUM-WELLS

被引：4

作者：

TSEN, KT

机构：

来源：

INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 1993年 / 7卷 / 25期

关键词：

D O I：

10.1142/S0217979293003619

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electron-optical phonon interactions polar semiconductor quantum wells are reviewed. Three macroscopic and one microscopic models for electron-optical phonon interactions are compared with experimental results in GaAs-AlAs polar semiconductor quantum wells recently obtained by picosecond time-resolved Raman spectroscopy. The macroscopic model of Huang and Zhu as well as the microscopic model of Rucker et al. are found to be in good agreement with the experimental data. Direct measurements of electron-optical phonon scattering rates in GaAs-AlAs polar semiconductor quantum wells carried out by subpicosecond time-resolved Raman scattering technique are also presented. These experimental results are explained with the model of Huang and Zhu.

引用

页码：4165 / 4185

页数：21

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