SHUBNIKOV-DEHAAS EFFECT IN BISMUTH IN HIGH MAGNETIC-FIELDS

被引：14

作者：

HIRUMA, K

KIDO, G

MIURA, N

机构：

[1] Institute for Solid State Physics, University of Tokyo, Minato-ku, Tokyo, Roppongi

来源：

SOLID STATE COMMUNICATIONS | 1979年 / 31卷 / 12期

关键词：

D O I：

10.1016/0038-1098(79)90023-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Shubnikov-de Haas effect in Bi was observed in pulsed high magnetic fields up to 420 kG. Hole resonances were observed up to the second (N = 1) and the third (N = 2) peaks for the magnetic fields along the bisectrix and the binary axes, respectively. From the analysis of the resonant magnetic fields, changes of the Fermi level and the carrier concentration were calculated. The field at which the semimetal to semiconductor transition will occur was estimated as 850 kG {reversed tilde} 1 MG for the field direction parallel to the binary axis. Anomalously large decrease of the magnetoresistance was observed above 300 kG. © 1979.

引用

页码：1019 / 1022

页数：4

共 12 条

[1]

BRANDT NB, 1966, PISMA ESKP TEOR FIZ, V4, P27

[2] DIFFUSION SIZE EFFECT IN BISMUTH AT LIQUID HELIUM TEMPERATURES [J].