ELECTRODEPOSITION OF SILICON AT TEMPERATURES ABOVE ITS MELTING-POINT

被引：37

作者：

DEMATTEI, RC

ELWELL, D

FEIGELSON, RS

机构：

来源：

关键词：

D O I：

10.1149/1.2127716

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1712 / 1714

页数：3

共 9 条

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[2] GROWTH-RATE LIMITATIONS IN ELECTROCHEMICAL CRYSTALLIZATION
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FEIGELSON, RS
[J]. JOURNAL OF CRYSTAL GROWTH, 1978, 44 (02) : 115 - 120
[3] DEMATTEI RC, UNPUBLISHED
[4] JOHNSON KE, 1967, HIGH TEMPERATURE TEC, P493
[5] Levin E.M., 1964, MGO FEO SIO2 PHASE D
[6] NEWBERGER M, 1969, AD698342
[7] PORIS JA, COMMUNICATION
[8] ELECTROWINNING OF SILICON FROM K2SIF6-MOLTEN FLUORIDE SYSTEMS
RAO, GM
ELWELL, D
FEIGELSON, RS
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (09) : 1940 - 1944
[9] St Claire-Deville H., 1854, CR HEBD ACAD SCI, V39, P323