TEMPERATURE DEPENDENCE OF ELECTRON DIFFRACTION INTENSITIES (1120 OF BISMUTH IN CASE OF ANOMALOUS ELECTRON TRANSMISSION

被引：5

作者：

BOERSCH, H

JESCHKE, G

WILLASCH, D

机构：

[1] I. Physikalisches Institut der Technischen Universität, Berlin

来源：

PHYSICS LETTERS A | 1969年 / A 29卷 / 09期

关键词：

D O I：

10.1016/0375-9601(69)90393-4

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The temperature dependence of a dynamical two-beam system for the diffraction of 80 keV-electrons has been investigated for the (1120)-reflection of a bismuth single crystal between 300°K and 80°K. The intensities of the reflected and the primary beam increase in the same way exponentially with decreasing temperature. The experimental temperature coefficient can be explained by an electron-diffraction-theory. © 1969.

引用

页码：493 / &

共 16 条

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