FORMATION OF SILICON-CARBIDE WHISKERS AND THEIR MICROSTRUCTURE

被引:98
作者
CHRYSANTHOU, A
GRIEVESON, P
JHA, A
机构
[1] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,DEPT MAT,LONDON SW7 2AZ,ENGLAND
[2] BRUNEL UNIV,DEPT MAT TECHNOL,UXBRIDGE UB8 3PH,MIDDX,ENGLAND
关键词
D O I
10.1007/BF00557132
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thermodynamic and kinetic conditions for the formation of SiC whiskers are established. The mechanism of their nucleation and growth are studied and, on this basis, the magnitude of the thermally activated barrier is determined from the rate of reduction data. The microstructures of whiskers are analysed and the role of interfacial tension between the nuclei and impurities, and the metallic iron catalyst is studied in relation to the formation of SiC whiskers. A possible reason for polytypism in SiC whiskers is also proposed.
引用
收藏
页码:3463 / 3476
页数:14
相关论文
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