THE EFFECT OF BASE DOPING ON THE PERFORMANCE OF SI BIPOLAR-TRANSISTORS AT LOW-TEMPERATURES

被引：40

作者：

DUMKE, WP

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 05期

关键词：

D O I：

10.1109/T-ED.1981.20372

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：494 / 500

页数：7

共 31 条

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