ROOM-TEMPERATURE BACKBOND OXIDATION OF THE POROUS SILICON SURFACE BY OXYGEN RADICAL IRRADIATION

被引：34

作者：

OKEEFFE, P ^{[1
]}

AOYAGI, Y ^{[1
]}

KOMURO, S ^{[1
]}

KATO, T ^{[1
]}

MORIKAWA, T ^{[1
]}

机构：

[1] TOYO UNIV,FAC ENGN,KAWAGOE,SAITAMA 350,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 07期

关键词：

D O I：

10.1063/1.113438

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Backbond oxidation of the porous silicon (PS) surface as a result of irradiation by oxygen radicals (O*) from an electron cyclotron resonance plasma has been successfully achieved at room temperature. Increasing the O* irradiation time enhances both the photoluminescence (PL) intensity, and the oxygen related absorption in the 2000-2300 cm-1 wave number range obtained from Fourier-transform infrared spectroscopy (FTIR). Analysis of the FTIR spectra correlates oxidation of the outermost backbonded Si in the form H2Si-O2, HSi-O3 bonding structures with increasing PL intensity. Furthermore, these results show that oxidation of the backbonded Si network on the PS surface is the main mechanism responsible for the enhancement of the PL intensity and suppression of the PL fatigue. This enhancement and stabilization of the PL properties of PS at such low temperatures is explained in terms of the high sticking coefficient of O* and soft O* irradiation induced oxidation.© 1995 American Institute of Physics.

引用

页码：836 / 838

页数：3

共 15 条

[1] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].