THE DENSITY OF LOCALIZED STATES AT THE SEMIINSULATING POLYCRYSTALLINE AND SINGLE-CRYSTAL SILICON INTERFACE

被引：8

作者：

BRUNSON, KM

SANDS, D

THOMAS, CB

REEHAL, HS

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 10期

关键词：

D O I：

10.1063/1.337565

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3599 / 3604

页数：6

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