IMPLANTATION DAMAGE AND THE ANOMALOUS TRANSIENT DIFFUSION OF ION-IMPLANTED BORON

被引：80

作者：

MICHEL, AE ^{[1
]}

RAUSCH, W ^{[1
]}

RONSHEIM, PA ^{[1
]}

机构：

[1] IBM CORP,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 07期

关键词：

D O I：

10.1063/1.98375

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：487 / 489

页数：3

共 16 条

[1] INFLUENCE OF DAMAGE DEPTH PROFILE ON THE CHARACTERISTICS OF SHALLOW P+/N IMPLANTED JUNCTIONS [J].

CEMBALI, F ;

SERVIDORI, M ;

LANDI, E ;

SOLMI, S .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 94 (01) :315-319

[2] TRANSIENT ENHANCED DIFFUSION DURING RAPID THERMAL ANNEALING OF BORON IMPLANTED SILICON [J].

CHO, K ;

NUMAN, M ;

FINSTAD, TG ;

CHU, WK ;

LIU, J ;

WORTMAN, JJ .

APPLIED PHYSICS LETTERS, 1985, 47 (12) :1321-1323

[3]

DROWLWY CI, 1985, MATER RES SOC S P, V35, P375

[4] MODELING RAPID THERMAL-DIFFUSION OF ARSENIC AND BORON IN SILICON [J].

FAIR, RB ;

WORTMAN, JJ ;

LIU, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) :2387-2394

[5]

GIBBONS JF, 1975, PROJECTED RANGE STAT

[6] RAPID THERMAL ANNEALING OF BORON-IMPLANTED SILICON USING AN ULTRAHIGH POWER ARC LAMP [J].

HODGSON, RT ;

DELINE, VR ;

MADER, S ;

GELPEY, JC .

APPLIED PHYSICS LETTERS, 1984, 44 (06) :589-591

[7]

HODGSON RT, 1984, MATER RES SOC S P, V23, P253

[8]

Hofker W. K., 1973, Applied Physics, V2, P265, DOI 10.1007/BF00889509

[9]

HOPKINS LC, 1985, ELECTROCHEM SOC, V32, P2035

[10] FORMATION OF STACKING-FAULTS AND ENHANCED DIFFUSION IN OXIDATION OF SILICON [J].

HU, SM .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) :1567-1573

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