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CZOCHRALSKI ENCAPSULATION GROWTH OF GETE, SNTE AND PBTE SINGLE CRYSTALS

被引：14
作者：
BAUGHMAN, RJ
LEFEVER, RA
机构：
[1] Sandia Laboratories, Albuquerque
来源：
MATERIALS RESEARCH BULLETIN | 1969年 / 4卷 / 10期
关键词：
D O I：
10.1016/0025-5408(69)90062-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Large single crystals of germanium telluride, tin telluride and lead telluride were grown by a modified Czochralski technique in which liquid encapsulation was combined with a substantial neutral-gas overpressure to eliminate vaporization during growth. The B2O3 encapsulating layer also maintained a clean melt surface by acting as a fluxing agent. Growth conditions, physical appearance and electrical properties of the crystals are reported. © 1969.
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页码：721 / &
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