MEMORY EXCHANGE IN AMORPHOUS SEMICONDUCTORS

被引：16

作者：

KIKUCHI, M

IIZIMA, S

机构：

[1] Electrotechnical Laboratory, Mukodai, Tanashi, Tokyo

来源：

APPLIED PHYSICS LETTERS | 1969年 / 15卷 / 10期

关键词：

D O I：

10.1063/1.1652843

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Experimental observations of the interaction of the memory in amorphous semiconductors are described. Between two pairs of electrodes located sufficiently close by, memory exchange has been observed, namely, switch-on or lock-on" (memory setting) of one pair of electrodes unlocks the memory of the other pair. The results are attributed to the thermal interaction between "lock-on" filament and switch-on filament. © 1969 The American Institute of Physics."

引用

页码：323 / &

共 12 条

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PEARSON, AD
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[8] PEARSON AD, 1963, ADVANCES GLASS TEC 2, P145
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