PLANAR DECHANNELING AND VOLUME CAPTURE OF HIGH-ENERGY PROTONS IN A BENT CRYSTAL

被引：21

作者：

TARATIN, AM

VOROBIEV, SA

机构：

[1] Nuclear Physics Institute, Tomsk Polytehnical Institute, Tomsk

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1990年 / 47卷 / 03期

关键词：

D O I：

10.1016/0168-583X(90)90753-H

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Computer simulation is used to investigate planar dechanneling and volume capture of protons with energies of up to 200 GeV in a bent silicon crystal. Energy and temperature dependences of dechanneling lengths, discovered experimentally, are analyzed. It is shown that the capture of protons into the channeling regime within the crystal bulk due to multiple scattering by crystal electrons and nuclei decreases with decreasing radius of bending as well as with increasing energy of the particles, whereas it is practically independent of the crystal temperature. © 1990.

引用

页码：247 / 252

页数：6

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