BEVEL CROSS SECTIONING OF ULTRATHIN (- 100 A) III-V-SEMICONDUCTOR LAYERS

被引：31

作者：

HOLONYAK, N

VOJAK, BA

KOLBAS, RM

DUPUIS, RD

DAPKUS, PD

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] ROCKWELL INT,DIV DEVICES,ELECTR RES CTR,ANAHEIM,CA 92803

来源：

SOLID-STATE ELECTRONICS | 1979年 / 22卷 / 04期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0038-1101(79)90097-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A method is described for extending the use of bevel cross sectioning of semiconductor layers from the usual limits of 500-1000 to 80-100 Å. The modified bevel cross sectioning described is used to view the 11 layers (6 GaAs and 5 AlGaAs, each ∼ 120 A ̊) and the 7 layers (4 GaAs and 3 AlGaAs, each ∼ 80 A ̊) of two multiple quantum-well AlxGa1-xAsGaAs (laser) heterostructures grown by metalorganic chemical vapor deposition (MO-CVD). © 1979.

引用

页码：431 / &

共 9 条

[1] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9
[2] DUPOIS RD, 1978, APPL PHYS LETT, V32, P295
[3] HIGH-EFFICIENCY GAALAS-GAAS HETEROSTRUCTURE SOLAR-CELLS GROWN BY METALLO-ORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
DAPKUS, PD
YINGLING, RD
MOUDY, LA
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (03) : 201 - 203
[4] ROOM-TEMPERATURE OPERATION OF DISTRIBUTED-BRAGG-CONFINEMENT GA1-XALXAS-GAAS LASERS GROWN BY METALLO-ORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
DAPKUS, PD
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (01) : 68 - 69
[5] DUPUIS RD, 1977, APPL PHYS LETT, V31, P366
[6] EPITAXIAL STRUCTURES WITH ALTERNATE ATOMIC-LAYER COMPOSITION MODULATION
GOSSARD, AC
PETROFF, PM
WEIGMANN, W
DINGLE, R
SAVAGE, A
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (06) : 323 - 325
[7] LOW-THRESHOLD CONTINUOUS LASER OPERATION (300-337-DEGREES-K) OF MULTILAYER MO-CVD ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES
HOLONYAK, N
KOLBAS, RM
LAIDIG, WD
VOJAK, BA
DUPUIS, RD
DAPKUS, PD
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (08) : 737 - 739
[8] POATE JM, 1978, THIN FILMS INTERDIFF, P81
[9] LPE IN1-XGAXP1-ZASZ(X-0.12,Z-0.26) DH LASER WITH MULTIPLE THIN-LAYER (LESS-THAN 500 A) ACTIVE REGION
REZEK, EA
HOLONYAK, N
VOJAK, BA
STILLMAN, GE
ROSSI, JA
KEUNE, DL
FAIRING, JD
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (04) : 288 - 290

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