GAAS BUFFER LAYERS GROWN AT LOW SUBSTRATE TEMPERATURES USING AS2 AND THE FORMATION OF ARSENIC PRECIPITATES

被引：41

作者：

MELLOCH, MR ^{[1
]}

MAHALINGAM, K ^{[1
]}

OTSUKA, N ^{[1
]}

WOODALL, JM ^{[1
]}

WARREN, AC ^{[1
]}

机构：

[1] IBM CORP,DIV RES,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90943-Y

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have grown GaAs layers by molecular beam epitaxy at low substrate temperatures (250-degrees-C) using the dimer arsenic source As2. Following a one hour anneal at 600-degrees-C, the GaAs layers were examined with transmission electron microscopy. The GaAs layers contained arsenic precipitates of average diameter 100 angstrom and density of 10(17) cm-3.

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页码：39 / 42

页数：4

相关论文

共 12 条

[1] CALIBRATION OF IONIZATION GAUGE FOR DIFFERENT GASES [J].

DUSHMAN, S ;

YOUNG, AH .

PHYSICAL REVIEW, 1945, 68 (11-1) :278-278

[2]

JOHNSON DA, UNPUB APPL PHYS LETT

[3] STRUCTURAL-PROPERTIES OF AS-RICH GAAS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES [J].

KAMINSKA, M ;

LILIENTALWEBER, Z ;

WEBER, ER ;

GEORGE, T ;

KORTRIGHT, JB ;

SMITH, FW ;

TSAUR, BY ;

CALAWA, AR .

APPLIED PHYSICS LETTERS, 1989, 54 (19) :1881-1883

[4] ANOMALIES IN MODFETS WITH A LOW-TEMPERATURE BUFFER [J].

LIN, BJF ;

KOCOT, CP ;

MARS, DE ;

JAEGER, R .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (01) :46-50

[5]

LIN BJF, 1988, 46TH DEV RES C

[6] FORMATION OF ARSENIC PRECIPITATES IN GAAS BUFFER LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW SUBSTRATE TEMPERATURES [J].

MELLOCH, MR ;

OTSUKA, N ;

WOODALL, JM ;

WARREN, AC ;

FREEOUF, JL .

APPLIED PHYSICS LETTERS, 1990, 57 (15) :1531-1533

[7] EFFECT OF A GAAS BUFFER LAYER GROWN AT LOW SUBSTRATE TEMPERATURES ON A HIGH-ELECTRON-MOBILITY MODULATION-DOPED TWO-DIMENSIONAL ELECTRON-GAS [J].

MELLOCH, MR ;

MILLER, DC ;

DAS, B .

APPLIED PHYSICS LETTERS, 1989, 54 (10) :943-945

[8] ELECTRICAL AND OPTICAL CHARACTERIZATION OF GAS SOURCE AND SOLID SOURCE MBE LOW-TEMPERATURE BUFFERS [J].

PUECHNER, RA ;

JOHNSON, DA ;

SHIRALAGI, KT ;

GERBER, DS ;

DROOPAD, R ;

MARACAS, GN .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :43-49

[9] NEW MBE BUFFER USED TO ELIMINATE BACKGATING IN GAAS-MESFETS [J].

SMITH, FW ;

CALAWA, AR ;

CHEN, CL ;

MANFRA, MJ ;

MAHONEY, LJ .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (02) :77-80

[10] PICOSECOND GAAS-BASED PHOTOCONDUCTIVE OPTOELECTRONIC DETECTORS [J].

SMITH, FW ;

LE, HQ ;

DIADIUK, V ;

HOLLIS, MA ;

CALAWA, AR ;

GUPTA, S ;

FRANKEL, M ;

DYKAAR, DR ;

MOUROU, GA ;

HSIANG, TY .

APPLIED PHYSICS LETTERS, 1989, 54 (10) :890-892