TEMPERATURE-DEPENDENCE OF THRESHOLD VOLTAGE IN THIN-FILM SOI MOSFETS

被引：121

作者：

GROESENEKEN, G ^{[1
]}

COLINGE, JP ^{[1
]}

MAES, HE ^{[1
]}

ALDERMAN, JC ^{[1
]}

HOLT, S ^{[1
]}

机构：

[1] PLESSEY RES CASWELL,TOWCESTER NN12 8EQ,NORTHANTS,ENGLAND

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 08期

关键词：

D O I：

10.1109/55.57923

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The temperature dependence of the threshold voltage of thin-film SOI n-channel MOSFET's is analyzed. Threshold voltage variation with temperature is significantly smaller in thin-film (fully depleted) devices than in thick-film SOI and bulk devices. There exists a critical temperature below which the device is fully depleted, and above which the device operates in the thick-film regime. © 1990 IEEE

引用

页码：329 / 331

页数：3

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[2]

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