THEORETICAL-ANALYSIS FOR A NEW PACKAGE CONCEPT - HIGH-SPEED HEAT REMOVAL FOR VLSI USING AN AIN HEAT-SPREADING LAYER AND MICROCHANNEL FIN

被引：4

作者：

TSUBOUCHI, K

UTSUGI, S

FUTATSUYA, T

MIKOSHIBA, N

机构：

[1] Research Institute of Electrical Communication, Tohoku University, Aoba-ku Sendai, 980

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 1B期

关键词：

MICROCHANNEL; FIN; AIN; HEAT REMOVAL; HEAT SPREADER; VLSI;

D O I：

10.1143/JJAP.30.L88

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose a microchannel-fin package concept utilizing an AIN passivation layer as the heat spreader and a microchannel fin as an efficient means of heat removal. AIN film has high thermal conductivity and compatibility with the thermal expansion coefficient of Si. A microchannel fin has 4-fold 100 lines of 50-mu-m x 250-mu-m channels on a 1 cm2 chip. The simulation of dynamic thermal analysis for the new package concept showed that the chip temperature was below 47-degrees-C at a power density of 1.5 kW.cm-2 when the liquid-cooled microchannel-fin package was used and below 49-degrees-C at 30 W.cm-2 when a compressive-air-cooled microchannel-fin package was used.

引用

页码：L88 / L91

页数：4