ALL HIGH-TC EPITAXIAL YBA2CU3OX/NDGAO3/YBA2CU3OX HETEROSTRUCTURES

被引：7

作者：

KOBAYASHI, J

TAZOH, Y

MUKAIDA, M

MIYAZAWA, S

机构：

[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa, 243-01, 3-1, Morinosato Wakamiya

来源：

PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 1991年 / 185卷

关键词：

D O I：

10.1016/0921-4534(91)91144-S

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SIS (Superconductor/Insulator/Superconductor) structures consisting of high-Tc YBa2Cu3Ox (YBCO) require epitaxial interfaces. To devise these interfaces, we have fabricated the SIS structure using NdGaO3 lattice-matched with YBCO as a substrate and an insulating layer. SIS structures were examined by Reflection High Energy Electron Diffraction (RHEED). X-ray Reflection Diffractometry (XRD) and Scanning Electron Microscopy (SEM). Results show that all epitaxial SIS structures were successfully fabricated.

引用

页码：2039 / 2040

页数：2

共 4 条

[1] EPITAXIALLY GROWN SPUTTERED LAALO3 FILMS [J].