SPIN RELAXATION OF CONDUCTION ELECTRONS IN HIGHLY DOPED SEMICONDUCTORS (INSB, SI, GE)

被引：16

作者：

GERSHENZON, EM

PEVIN, NM

FOGELSON, MS

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1972年 / 49卷 / 01期

关键词：

D O I：

10.1002/pssb.2220490127

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：287 / +

页数：1

共 26 条

[1]

BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

[2] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J].

COHEN, ML ;

BERGSTRESSER, TK .

PHYSICAL REVIEW, 1966, 141 (02) :789-+

[3] HIGH-STRESS PIEZORESISTANCE AND MOBILITY IN DEGENERATE SB-DOPED GERMANIUM [J].

CUEVAS, M ;

FRITZSCH.H .

PHYSICAL REVIEW, 1965, 137 (6A) :1847-&

[4] THEORY OF THE EFFECT OF SPIN-ORBIT COUPLING ON MAGNETIC RESONANCE IN SOME SEMICONDUCTORS [J].

ELLIOTT, RJ .

PHYSICAL REVIEW, 1954, 96 (02) :266-279

[5] ELECTRON SPIN RESONANCE EXPERIMENTS ON DONORS IN SILICON .1. ELECTRONIC STRUCTURE OF DONORS BY THE ELECTRON NUCLEAR DOUBLE RESONANCE TECHNIQUE [J].

FEHER, G .

PHYSICAL REVIEW, 1959, 114 (05) :1219-1244

[6] SOME FEATURES OF ESR AND SPIN-LATTICE RELAXATION OF ELECTRONS IN GE AND INSB WITH DIFFERENT DONOR CONCENTRATIONS [J].

GERSHENZ.EM ;

PEVIN, NM ;

FOGELSON, MS .

PHYSICA STATUS SOLIDI, 1970, 38 (02) :865-&

[7]

Gershenzon E. M., 1969, Fizika i Tekhnika Poluprovodnikov, V3, P748

[8] ON MODES OF ACOUSTOELECTRIC GAIN IN N-INSB [J].

GORELIK, J ;

FISHER, B ;

PRATT, B ;

LUZ, Z .

PHYSICS LETTERS A, 1969, A 28 (07) :485-&

[9] DENSITY OF CONDUCTION ELECTRONS AT NUCLEI IN INDIUM ANTIMONIDE [J].

GUERON, M .

PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 135 (1A) :A200-&

[10] ELECTRON SPIN RESONANCE IN N-TYPE INSB [J].

ISAACSON, RA .

PHYSICAL REVIEW, 1968, 169 (02) :312-&

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