PHOTOLUMINESCENT STUDIES OF CONDENSED PHASE IN PHOSPHORUS-DOPED SILICON

被引：11

作者：

HALLIWELL, RE ^{[1
]}

PARSONS, RR ^{[1
]}

机构：

[1] UNIV BRITISH COLUMBIA, DEPT PHYS, VANCOUVER 8, BRITISH COLUMBI, CANADA

来源：

SOLID STATE COMMUNICATIONS | 1973年 / 13卷 / 08期

关键词：

D O I：

10.1016/0038-1098(73)90573-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1245 / 1248

页数：4

共 12 条

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[4] INFRARED ABSORPTION IN HEAVILY DOPED N-TYPE SI [J].

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AZIZA, A ;

AMZALLAG, E .

PHYSICA STATUS SOLIDI, 1969, 31 (01) :323-+

[5]

BENOITAL.C, 1973, PHYS REV B, V7, P1723, DOI 10.1103/PhysRevB.7.1723

[6]

BENOITALAGUILLA.C, 1972, 9 P INT C PHYS SEM W, P659

[7] NEW RADIATIVE RECOMBINATION PROCESSES INVOLVING NEUTRAL DONORS AND ACCEPTORS IN SILICON AND GERMANIUM [J].

DEAN, PJ ;

HAYNES, JR ;

FLOOD, WF .

PHYSICAL REVIEW, 1967, 161 (03) :711-&

[8]

GOBEL E, 1972, 11TH P INT C PHYS SE, P691

[9]

KELDYSH LV, 1968, 9TH P INT C PHYS SEM, P1303

[10]

POKROVSKII E, 1972, 9 P INT C PHYS SEM W, P69

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