OPTICAL PROPERTIES OF MG2SI MG2GE AND MG2SN FROM 0.6 TO 11.0 EV AT 77 DEGREES K

被引:65
作者
SCOULER, WJ
机构
[1] Lincoln Laboratory, Massachusetts Institute of Technology, Lexington
来源
PHYSICAL REVIEW | 1969年 / 178卷 / 03期
关键词
D O I
10.1103/PhysRev.178.1353
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Reflectance measurements of the semiconducting compounds Mg2Si, Mg2Ge, and Mg2Sn from 0.6 to 11.0 eV at 77°K are analyzed by the Kramers-Kronig relations to yield the optical and dielectric constants. These materials crystallize in the antifluorite structure yet their optical properties are similar to those of zinc-blende semiconductors. A short discussion is included concerning the dependence of the dielectric constant upon the accuracy of the reflectance measurements and upon the choice of the arbitrary high-energy reflectance function. © 1969 The American Physical Society.
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页码:1353 / &
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