CURRENT ACTIVITY IN CNRS-SOPHIA ANTIPOLIS REGARDING WIDE-GAP II-VI MATERIALS

被引:10
作者
FAURIE, JP
BRUNET, P
MORHAIN, C
ONGARETTO, C
TOURNIE, E
机构
[1] Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications (CRHEA), CNRS-Sophia Antipolis, Valbonne
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1995年 / 187卷 / 02期
关键词
D O I
10.1002/pssb.2221870226
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Preliminary results about MBE growth and characterization of ZnSe-based alloys and multi-quantum wells (MQW) are presented. Undoped ZnSe and Zn1-xCdxSe compounds exhibiting structural and optical properties, comparable to the best results previously published, are grown. RHEED intensity oscillations are observed during ZnSe and Zn1-xCdxSe growth. Several Zn1-xCdxSe/ZnSe MQWs are grown. RHEED intensity analysis is used to accurately control the well thicknesses. The MQWs produce very intense and sharp photoluminescence peaks. The sharpness of interfaces is confirmed by X-ray analysis. Cl-doped ZnSe epilayers with doping levels at 77 K ranging from 6 x 10(15) to 6 x 10(18) cm(-3) are obtained.
引用
收藏
页码:457 / 466
页数:10
相关论文
共 17 条
  • [1] Deparis C., Massies J., J. Crystal Growth, 108, (1991)
  • [2] Faurie J.P., Hsu C., Sivananthan S., Chu X., Surface Sci., 168, (1986)
  • [3] Tamargo M.C., de Miguel J.L., Hwang D.M., Farrell H.H., Structural characterization of GaAs/ZnSe interfaces, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 6, (1988)
  • [4] Guha S., Munekata H., Chang L.L., Tang W.C., J. Crystal Growth, 127, (1993)
  • [5] Massies J., Grandjean N., Phys. Rev. Letters, 71, (1993)
  • [6] Yao T., Zhu Z.Q., Uesugi K., Kamiyama S., Fukimoto M., Molecular beam epitaxy/atomic layer epitaxy growth processes of wide-band-gap II–VI compounds: Characterization of surface stoichiometry by reflection high-energy electron diffraction, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 8, (1990)
  • [7] Ruppert P., Hommel D., Behr T., Heinke H., Waag A., Landwehr G., J. Crystal Growth, 138, (1994)
  • [8] Shahzad K., Petruzzello J., Olego D.J., Cammack D.A., Gaines J.M., Appl. Phys. Letters, 57, (1990)
  • [9] Saraie J., Matsumura N., Tsubokura M., Miyagawa K., Nakamura N., Y-Line Emission and Lattice Relaxation in MBE-ZnSe and -ZnSSe on GaAs, Japanese Journal of Applied Physics, 28, (1989)
  • [10] Samarth N., Luo H., Furdyna J.K., Qadri S.B., Lee Y.R., Ramdas A.K., Otsuka N., J. electronic Mater., 19, (1990)