POROUS SIO2-FILMS ANALYZED BY TRANSMISSION ELECTRON-MICROSCOPY

被引：14

作者：

GIGNAC, LM

PARRILL, TM

CHANDRASHEKHAR, GV

机构：

[1] TEXAS INSTRUMENTS INC,DALLAS,TX 75243

[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

THIN SOLID FILMS | 1995年 / 261卷 / 1-2期

关键词：

ORGANIC SUBSTANCES; SILICON NITRIDE; SILICON OXIDE; TRANSMISSION ELECTRON MICROSCOPY;

D O I：

10.1016/S0040-6090(94)06497-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Porous SiO2 films derived from a novel organic-inorganic composite sol-gel process were studied for possible applications in the microelectronics industry. The films were capped with plasma-enhanced chemical-vapor-deposited silicon nitride and characterized using ellipsometry, IR spectroscopy and cross-sectional transmission electron microscopy (TEM). TEM cross-sections were prepared using a focused ion beam (FIB) system, because traditional TEM preparation by polishing was too harsh for the fragile samples. The TEM analysis determined the film thickness to be 155 nm for SiO2 and 83 nm for Si3N4, and showed high porosity in the SiO, film and vertical pores in the Si3N4 film.

引用

页码：59 / 63

页数：5

共 21 条

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