EPITAXIAL-GROWTH OF COBALT FILMS ON CU(100) - A CRYSTALLOGRAPHIC LEED DETERMINATION

被引:102
作者
CERDA, JR
DEANDRES, PL
CEBOLLADA, A
MIRANDA, R
NAVAS, E
SCHUSTER, P
SCHNEIDER, CM
KIRSCHNER, J
机构
[1] UNIV AUTONOMA MADRID,DEPT FIS MAT CONDENSADA,E-28049 MADRID,SPAIN
[2] FREE UNIV BERLIN,INST EXPTL PHYS,W-1000 BERLIN 33,GERMANY
关键词
D O I
10.1088/0953-8984/5/14/005
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Epitaxial thin films of cobalt ranging from 1 ML Up to 10 ML have been grown on a Cu(100) substrate and characterized by LEED. The Cobalt is found to grow, adopting a slight tetragonal distortion of its high-temperature FCC phase. Further growth of 5 ML Cu on top of a 5 ML CO film results in an almost perfect Cu(100) surface.
引用
收藏
页码:2055 / 2062
页数:8
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