HOT-ELECTRON INJECTION IN INALGAAS/INGAAS BALLISTIC COLLECTION TRANSISTORS

被引：3

作者：

NAKAJIMA, H

ISHIBASHI, T

机构：

[1] NTT LSI Labs., Kanagawa

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 3B期

关键词：

D O I：

10.1088/0268-1242/7/3B/137

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hot electron transport in InAlGaAs/InGaAs ballistic collection transistors (BCTS) is simulated using a self-consistent Monte Carlo method. We analyse the effects of hot electron injection on the device performance of BCTS with various injection energies. The simulation has shown that the base and collector transit times in BCTs have conspicuous dependences on the energy of hot electrons in the base region.

引用

页码：B527 / B529

页数：3

共 7 条

[1] MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE [J].