SPATIO-SPECTRAL CHARACTERISTICS OF A HIGH-POWER, HIGH-BRIGHTNESS CW INGAAS/ALGAAS UNSTABLE RESONATOR SEMICONDUCTOR-LASER

被引：10

作者：

BAO, Z

DEFREEZ, RK

CARLESON, PD

LARGENT, C

MOELLER, C

DENTE, GC

机构：

[1] PHILIPS LABS,KIRTLAND AFB,NM 87117

[2] GCD ASSOCIATES,ALBLIQUERQUE,NM 87110

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 18期

关键词：

UNSTABLE RESONATOR; SEMICONDUCTOR LASER; SPATIO-SPECTRAL CHARACTERISTICS;

D O I：

10.1049/el:19931064

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An InGaAs/AlGaAs GRINSCH SQW semiconductor laser with a half-symmetric unstable resonator has been fabricated using focused-ion-beam micromachining (FIBM), and CW operated with output powers up to 1.2 W, and brightness up to 92 MW cm-2 Sr-1. Its spatio-spectral characteristics and lasing action are investigated, and explained by a core-amplifier model.

引用

页码：1597 / 1599

页数：3

共 6 条

[1]

DEFREEZ RK, 1993, P SOC PHOTO-OPT INS, V1850, P75, DOI 10.1117/12.146934

[2]

DEFREEZ RK, 1992, P CLASERS ELECTROOPT, P340

[3]

DEFREEZ RK, 1989, SPIE, V1043, P25

[4]

SIEGMAN AE, 1965, P IEEE, V53, P27