ELECTRICAL CHARACTERISTICS OF TUNGSTEN-CONTACTS TO 6H-SIC AT TEMPERATURES BETWEEN 300-K AND 950-K

被引：10

作者：

RASTEGAEVA, MG

SYRKIN, AL

机构：

[1] A. F. Ioffe Physico-Technical Institute, Academy of Sciences, the USSR, St. Petersburg

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1992年 / 33卷 / 1-2期

关键词：

Tungsten-Based Ohmic Contacts;

D O I：

10.1016/0924-4247(92)80234-T

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Tungsten-based ohmic contacts to n-6H-SiC have been fabricated. The temperature dependence of the contact resistance was studied. It has been found that throughout the experimental temperature range, 300-950 K, the contact resistance remains essentially constant. For (0001)C and (0001)Si orientations the contact resistance behaviour was identical. Specific contact resistance values for the (0001)C orientation were, on average, 2-2.5 times higher compared with the (0001)Si orientation for the same doping level; at N(d)-N(a) = 3 x 10(18) cm-3 the respective values are 2 x 10(-3) and 7 x 10(-4) OMEGA-cm2. The investigations we have carried out demonstrate the temperature stability of W-based contacts to 6H-SiC.

引用

页码：95 / 96

页数：2