GE PHOTOCAPACITIVE MIS INFRARED DETECTORS

被引：4

作者：

BINARI, SC ^{[1
]}

MILLER, WE ^{[1
]}

SHER, A ^{[1
]}

TSUO, YH ^{[1
]}

机构：

[1] NASA,LANGLEY RES CTR,HAMPTON,VA 23665

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 12期

关键词：

D O I：

10.1063/1.325979

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An undoped Ge photocapacitive detector is reported which has peak normalized detectivities D*λ at wavelengh 1.4 μm and chopping frequencies 13-103 Hz of 9×1012, 1×1012, 4×109 cm Hz1/2/W, operating respectively at temperatures 77, 195, and 295° K. The observed temperature, spectral, and frequency response of the signal and noise are explained in terms of the measured space charge and interface state properties of the device.

引用

页码：7883 / 7886

页数：4

共 9 条

[1] CREMOUX BD, 1972, REV TECH THOMSON CSF, V4
[2] CROWELL CR, 1965, T METALL SOC AIME, V233, P478
[3] Goetzberger A., 1976, Critical Reviews in Solid State Sciences, V6, P1, DOI 10.1080/10408437608243548
[4] NICOLLIAN EN, 1967, BELL SYST TECH J, V6, P1055
[5] INSB MOS INFRARED DETECTOR
PHELAN, RJ
DIMMOCK, JO
[J]. APPLIED PHYSICS LETTERS, 1967, 10 (02) : 55 - &
[6] LAF3 INSULATORS FOR MIS STRUCTURES
SHER, A
MILLER, WE
TSUO, YH
MORIARTY, JA
CROUCH, RK
SEIBER, BA
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (11) : 799 - 801
[7] PHOTOCAPACITIVE MIS INFRARED DETECTORS
SHER, A
CROUCH, RK
LU, SSM
MILLER, WE
MORIARTY, JA
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (11) : 713 - 715
[8] SHER A, UNPUBLISHED
[9] SZE SM, 1969, PHYSICS SEMICONDUCTO, P425

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