AB-INITIO CALCULATION OF HYPERFINE PARAMETERS FOR NITROGEN-PAIR DEFECTS IN AMORPHOUS-SILICON NITRIDE

被引：2

作者：

ISHII, N ^{[1
]}

SHIMIZU, T ^{[1
]}

机构：

[1] KANAZAWA UNIV, DEPT ELECT & COMP ENGN, KANAZAWA, ISHIKAWA 920, JAPAN

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.48.14653

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Hyperfine parameters for nitrogen-pair defects have been calculated using the density-functional theory. The results calculated using a gradient-corrected local-spin-density approximation are in fairly good agreement with the observed ones. It is confirmed that nitrogen-pair defects are the origin of the complicated ESR signal in amorphous silicon nitride prepared at a high deposition rate.

引用

页码：14653 / 14655

页数：3

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