SOFT-X-RAY PROJECTION IMAGING WITH MULTILAYER REFLECTION MASKS

被引：9

作者：

ITO, M

OIZUMI, H

SOGA, T

YAMANASHI, H

OGAWA, T

KATAGIRI, S

SEYA, E

TAKEDA, E

机构：

[1] Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo, 185

来源：

MICROELECTRONIC ENGINEERING | 1995年 / 27卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(94)00108-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Patterning methods for an etched multilayer mask and an absorber overlayer mask are investigated for use at a 13-nm wavelength. RIE in SF6 is used to etch a Mo/Si multilayer and a W absorber overlayer with a SiO2 etch-stop layer. Fine patterns as small as 0.25 mum are clearly formed. In particular, pattern sidewalls of the absorber overlayer mask are extremely steep. The reflectivity measurement using large reflective-area samples indicates that neither method causes significant damage to the multilayer. The mask patterns are imaged onto a resist-coated wafer using a 20:1 Schwarzschild optic, confirming that 0.07-mum line-and-space patterns can be printed using either mask.

引用

页码：285 / 290

页数：6

共 11 条

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