CATHODOLUMINESCENCE ATOMIC SCALE IMAGES OF MONOLAYER ISLANDS AT GAAS/GAALAS INTERFACES

[1] SUPER-LATTICE BAND-STRUCTURE IN THE ENVELOPE-FUNCTION APPROXIMATION [J]. PHYSICAL REVIEW B, 1981, 24 (10): : 5693 - 5697

[2] BAUER R, 1987, 18TH P INT C PHYS SE

[3] Bimberg D., 1986, Solid State Devices 1985. Invited Papers Presented at the 15th European Solid State Device Research Conference, P101

[4] KINETICS OF ISLAND FORMATION AT THE INTERFACES OF ALGAAS/GAAS/ALGAAS QUANTUM-WELLS UPON GROWTH INTERRUPTION [J]. SUPERLATTICES AND MICROSTRUCTURES, 1987, 3 (01) : 79 - 82

[5] EVIDENCE FOR EXCITONIC DECAY OF EXCESS CHARGE-CARRIERS IN HIGH-QUALITY GAAS QUANTUM-WELLS AT ROOM-TEMPERATURE [J]. APPLIED PHYSICS LETTERS, 1986, 49 (02) : 76 - 78

[6] STRUCTURAL-CHANGES OF THE INTERFACE, ENHANCED INTERFACE INCORPORATION OF ACCEPTORS, AND LUMINESCENCE EFFICIENCY DEGRADATION IN GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY UPON GROWTH INTERRUPTION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 1014 - 1021

[7] KINETICS OF RELAXATION AND RECOMBINATION OF NONEQUILIBRIUM CARRIERS IN GAAS - CARRIER CAPTURE BY IMPURITIES [J]. PHYSICAL REVIEW B, 1985, 31 (12): : 7788 - 7799

[8] BOTTCHER EH, 1987, APPL PHYS LETT, V50, P1074, DOI 10.1063/1.97974

[9] OPTIMAL SURFACE AND GROWTH FRONT OF III-V SEMICONDUCTORS IN MOLECULAR-BEAM EPITAXY - A STUDY OF KINETIC PROCESSES VIA REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION SPECULAR BEAM INTENSITY MEASUREMENTS ON GAAS(100) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 890 - 895

[10] LOCALIZATION INDUCED ELECTRON-HOLE TRANSITION RATE ENHANCEMENT IN GAAS QUANTUM WELLS [J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 84 - 86

[1] SUPER-LATTICE BAND-STRUCTURE IN THE ENVELOPE-FUNCTION APPROXIMATION [J]. PHYSICAL REVIEW B, 1981, 24 (10): : 5693 - 5697

[2] BAUER R, 1987, 18TH P INT C PHYS SE

[3] Bimberg D., 1986, Solid State Devices 1985. Invited Papers Presented at the 15th European Solid State Device Research Conference, P101

[4] KINETICS OF ISLAND FORMATION AT THE INTERFACES OF ALGAAS/GAAS/ALGAAS QUANTUM-WELLS UPON GROWTH INTERRUPTION [J]. SUPERLATTICES AND MICROSTRUCTURES, 1987, 3 (01) : 79 - 82

[5] EVIDENCE FOR EXCITONIC DECAY OF EXCESS CHARGE-CARRIERS IN HIGH-QUALITY GAAS QUANTUM-WELLS AT ROOM-TEMPERATURE [J]. APPLIED PHYSICS LETTERS, 1986, 49 (02) : 76 - 78

[6] STRUCTURAL-CHANGES OF THE INTERFACE, ENHANCED INTERFACE INCORPORATION OF ACCEPTORS, AND LUMINESCENCE EFFICIENCY DEGRADATION IN GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY UPON GROWTH INTERRUPTION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 1014 - 1021

[7] KINETICS OF RELAXATION AND RECOMBINATION OF NONEQUILIBRIUM CARRIERS IN GAAS - CARRIER CAPTURE BY IMPURITIES [J]. PHYSICAL REVIEW B, 1985, 31 (12): : 7788 - 7799

[8] BOTTCHER EH, 1987, APPL PHYS LETT, V50, P1074, DOI 10.1063/1.97974

[9] OPTIMAL SURFACE AND GROWTH FRONT OF III-V SEMICONDUCTORS IN MOLECULAR-BEAM EPITAXY - A STUDY OF KINETIC PROCESSES VIA REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION SPECULAR BEAM INTENSITY MEASUREMENTS ON GAAS(100) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 890 - 895

[10] LOCALIZATION INDUCED ELECTRON-HOLE TRANSITION RATE ENHANCEMENT IN GAAS QUANTUM WELLS [J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 84 - 86