HOT-ELECTRON EFFECTS IN METALS

被引:416
作者
WELLSTOOD, FC
URBINA, C
CLARKE, J
机构
[1] UNIV CALIF BERKELEY,DEPT PHYS,BERKELEY,CA 94720
[2] LAWRENCE BERKELEY LAB,DIV MAT SCI,BERKELEY,CA 94720
来源
PHYSICAL REVIEW B | 1994年 / 49卷 / 09期
关键词
D O I
10.1103/PhysRevB.49.5942
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
When sufficient electrical power P is dissipated in a thin metal film at millikelvin temperatures, the electrons can be driven far out of thermal equilibrium with the phonons. For uniform power dissipation in a volume OMEGA we show that the electrons attain a steady-state temperature T(e) = (P/SIGMAOEMGA + T(p)5)1/5, where T(p) is the phonon temperature and SIGMA is a parameter involving the electron-phonon coupling. We have used a sensitive ammeter based on a dc superconducting quantum interference device (SQUID) to measure the Nyquist current noise in thin films of AuCu as a function of P, and thus inferred T(e). We fitted our data to the theory with the single parameter SIGMA, and found good agreement for SIGMA = (2.4+/-0.6) X 10(9) Wm-3 K-5. When we increased the volume of the resistor by attaching a thin-film cooling fin, there was a much smaller increase in T(e) for a given power dissipation in the resistor, in qualitative agreement with a simple model for nonuniform heating. We also measured the flux noise in dc SQUIDs at low temperatures, and found that the white noise was limited by heating of the electrons in the resistive shunts of the Josephson junctions. We were able to reduce these effects substantially by attaching cooling fins to the shunts.
引用
收藏
页码:5942 / 5955
页数:14
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