IN SITU GROWTH AND PROPERTIES OF EPITAXIAL TlBa2CaCu2O7 and TlBa2(Ca1-xYx)Cu2O7 THIN FILMS

被引：8

作者：

Face, D. W. ^{[1
]}

Nestlerode, J. P. ^{[1
]}

机构：

[1] Du Pont Cent Res & Dev, POB 80304, Wilmington, DE 19880 USA

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1993年 / 3卷 / 01期

关键词：

D O I：

10.1109/77.233379

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Epitaxial TlBa2CaCu2O7 thin films have been grown on single crystal LaAlO3, NdGaO3, and CeO2 buffered sapphire substrates by in situ off-axis magnetron sputtering in the presence of Tl2O vapor. Phase formation in this system has been investigated for substrate temperatures from 490 degrees C to 600 degrees C and deposition pressures from 50 mTorr to 300 mTorr. The effect of Tl2O evaporation rate has also been studied. Xray diffraction shows that films deposited under optimum conditions are highly epitaxial with the c axis perpendicular to the substrate surface and [100] TlBa2CaCu2O7 aligned with pseudo-cubic [100] NdGaO3 and LaAlO3. Film surfaces are also smooth to within several unit cells (similar to 40 angstrom). The effect of 20% and 40% Y substitution for Ca has also been explored. TlBa2(Ca0.6Y0.4)Cu2O7 films have T(c)s up to 71 K while TlBa2(Ca0.8Y0.2)Cu2O7 films have T(c)s up to 97 K. In situ TlBa2(Ca0.6Y0.4)Cu2O7 films grown on CeO2 buffered sapphire are comparable to those on LaAlO3 and NdGaO3.

引用

页码：1516 / 1519

页数：4

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