OPTIMIZATION OF DIODE STRUCTURES FOR MONOLITHIC INTEGRATED MICROWAVE CIRCUITS

被引：11

作者：

BATTERSHALL, BW

EMMONS, SP

机构：

[1] Texas Instruments Incorporated, Dallas, Tex.

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1968年 / SC 3卷 / 02期

关键词：

D O I：

10.1109/JSSC.1968.1049852

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Device requirements of a medium power Ku-band reflective phase shifter are reviewed indicating a requirement for a diode with a 4-Terrahertz cut-off frequency. Various structures are examined to test their suitability for integration and feasibility for meeting specifications. A “pocket version” of a surface oriented device design is chosen and described. It is shown to meet or exceed all electrical requirements while providing for compatibility with final integration into the circuit. Copyright © 1968 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：107 / +

页数：1