AR-ION LASER-ASSISTED MOVPE OF ZNSE USING DMZN AND DMSE AS REACTANTS

被引：51

作者：

YOSHIKAWA, A

OKAMOTO, T

FUJIMOTO, T

ONOUE, K

YAMAGA, S

KASAI, H

机构：

[1] Department of Electrical and Electronics Engineering, Chiba University, Yayoi-cho, Chiba-shi

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1990年 / 29卷 / 02期

关键词：

Arion laser; II-VI compounds; Laser CVD; Photoassisted MOVPE; Photocatalysis; ZnSe;

D O I：

10.1143/JJAP.29.L225

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Growth of ZnSe layers by Ar ion laser-assisted MOVPE using DMZn and DMSe has been investigated. It is shown that an Ar ion laser can be a useful light source for the photoassisted MOVPE of ZnSe. By utilizing several Ar ion laser emission lines near the absorption edge of ZnSe as the irradiation light, it has been reconfirmed that the absorption of photons by the ZnSe layer is essential for the growth rate enhancement in the photoassisted MOVPE of ZnSe. Furthermore, it has been found for the first time that hydrogen gas plays a very important role in the reaction between DMZn and DMSe to form ZnSe under photoirradiation. © 1990 IOP Publishing Ltd.

引用

页码：L225 / L228

页数：4

共 18 条

[1] PHOTOENHANCED METALORGANIC CHEMICAL VAPOR-DEPOSITION OF ZNSE FILMS USING DIETHYLZINC AND DIMETHYLSELENIDE [J].

ANDO, H ;

INUZUKA, H ;

KONAGAI, M ;

TAKAHASHI, K .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) :802-805

[2] CHARACTERISTICS OF LASER METALORGANIC VAPOR-PHASE EPITAXY IN GAAS [J].

AOYAGI, Y ;

KANAZAWA, M ;

DOI, A ;

IWAI, S ;

NAMBA, S .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) :3131-3135

[3] TEMPERATURE DEPENDENCE OF THE WIDTH OF THE BAND GAP IN SEVERAL PHOTOCONDUCTORS [J].

BUBE, RH .

PHYSICAL REVIEW, 1955, 98 (02) :431-433

[4] REFLECTIVITY OF GRAY TIN SINGLE CRYSTALS IN FUNDAMENTAL ABSORPTION REGION [J].

CARDONA, M ;

GREENAWAY, D .

PHYSICAL REVIEW, 1962, 125 (04) :1291-&

[5] A SPECTROSCOPIC STUDY OF THE EXCITED-STATES OF DIMETHYLZINC, DIMETHYLCADMIUM, AND DIMETHYLMERCURY [J].

CHEN, CJ ;

OSGOOD, RM .

JOURNAL OF CHEMICAL PHYSICS, 1984, 81 (01) :327-334

[6] GAS-PHASE AND SURFACE-REACTIONS IN XENON LAMP-ASSISTED ORGANOMETALLIC VAPOR-PHASE EPITAXY OF ZNSE [J].

FUJITA, S ;

TAKEUCHI, FY ;

FUJITA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (11) :L2019-L2021

[7] INVESTIGATIONS OF PHOTO-ASSOCIATION MECHANISM FOR GROWTH-RATE ENHANCEMENT IN PHOTO-ASSISTED OMVPE OF ZNSE AND ZNS [J].

FUJITA, S ;

TANABE, A ;

SAKAMOTO, T ;

ISEMURA, M ;

FUJITA, S .

JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :259-264

[8] GROWTH-RATE ENHANCEMENT BY XENON LAMP IRRADIATION IN ORGANOMETALLIC VAPOR-PHASE EPITAXY OF ZNSE [J].

FUJITA, S ;

TANABE, A ;

SAKAMOTO, T ;

ISEMURA, M ;

FUJITA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (12) :L2000-L2002

[9] PHOTODEPOSITION OF ZN, SE, AND ZNSE THIN-FILMS [J].

JOHNSON, WE ;

SCHLIE, LA .

APPLIED PHYSICS LETTERS, 1982, 40 (09) :798-801

[10]

KAWAKYU K, 1986, 18TH INT C SOL STAT, P643

← 1 2 →