SHALLOW LEVELS, DEEP LEVELS AND ELECTRICAL CHARACTERISTICS IN ZN-DOPED GAINP/INP

被引：9

作者：

CHEN, JF ^{[1
]}

CHEN, JC ^{[1
]}

LEE, YS ^{[1
]}

CHOI, YW ^{[1
]}

XIE, K ^{[1
]}

LIU, PL ^{[1
]}

ANDERSON, WA ^{[1
]}

WIE, CR ^{[1
]}

机构：

[1] SUNY BUFFALO, DEPT ELECT & COMP ENGN, BUFFALO, NY 14260 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 08期

关键词：

D O I：

10.1063/1.345011

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Zn-doped GaxIn1-xP epilayers grown by metalorganic chemical vapor deposition have been studied in a wide range of GaP mole fraction. The Zn distribution coefficient was studied as a function of alloy composition. With a constant flow rate of diethylzinc, a decreasing net hole concentration was observed with increasing GaP mole fraction. The I-V characteristics of Au on p-GaxIn1-xP Schottky diodes show a deviation from an ideal thermionic behavior as the lattice mismatch increases. This deviation was analyzed in terms of the shunt resistance which decreased exponentially with the mismatch. A dominant hole trap located at E V+0.84 eV was detected by deep-level transient spectroscopy in a Ga0.032In0.968P layer. The density of this hole trap significantly increases with increasing lattice mismatch.

引用

页码：3711 / 3716

页数：6

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