OXIDATION OF GESI

被引：15

作者：

NICOLET, MA

LIU, WS

机构：

[1] California Institute of Technology, Pasadena

[2] Integrated Device Technology, Inc., San Jose

来源：

MICROELECTRONIC ENGINEERING | 1995年 / 28卷 / 1-4期

关键词：

Research on GeSi is supported by the Semiconductor Research Corporation under a coordinated program between Caltech (95SJ-100) and UCLA (95SJ-088); a support that is here gratefully acknowldged. We also express our gratitude to Integrated Device Technology; Inc; San Jose; CA; for its generous grants;

D O I：

10.1016/0167-9317(95)00040-F

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

页码：185 / 191

页数：7

共 8 条

[1]

Deal, Grove, General Relationship for the Thermal Oxidation of Silicon, Journal of Applied Physics, 36, (1965)

[2]

LeGoues, Rosenberg, Nguyen, Himpsel, Meyerson, J. Appl. Phys., 65, (1989)

[3]

Razouk, Lie, Deal, J. Electrochem. Soc., 128, (1981)

[4]

Paine, Caragianis, Schwartzman, J. Appl. Phys., 70, (1991)

[5]

Liu, Bai, Nicolet, Chern, Arbet, Wang, Wet Oxidation of Epitaxial Ge.36Si.64 on (100)Si, MRS Proceedings, 220, (1991)

[6]

Liu, Lee, Nicolet, Arbet-Engels, Wang, Abuhadba, Aita, J. Appl. Phys., 71, (1992)

[7]

Liu, Chen, Lie, Nicolet, Appl. Phys. Lett., 63, (1993)

[8]

Liu, Chen, Nicolet, Arbet-Engels, Wang, J. Appl. Phys., 72, (1992)

← 1 →