PHOTOELECTROCHEMICAL ETCHING OF 6H-SIC

被引：87

作者：

SHOR, JS

KURTZ, AD

机构：

[1] Kulite Semiconductor Products, Leonia

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1994年 / 141卷 / 03期

关键词：

D O I：

10.1149/1.2054810

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A new photoelectrochemical etching process is described for n-type 6H-SiC, while dark electrochemistry has been used to pattern p-type material. In this two-step etching process, the SiC is first anodized to form a deep porous layer, and this layer is subsequently removed by thermal oxidation followed by an HF dip. Etch rates as high as 4000 angstrom/min for n-SiC and 2.2 mum/min for p-SiC have been obtained during the anodization, resulting in near mirror-like etched surfaces.

引用

页码：778 / 781

页数：4

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