A-SI-H SCHOTTKY GATE ON N-GAINAS

被引：6

作者：

LOUALICHE, S

VAUDRY, C

HENRY, L

LECORRE, A

机构：

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 17期

关键词：

D O I：

10.1049/el:19860611

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：896 / 898

页数：3

共 12 条

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CHAN, WK ;

COX, HM ;

HUMMEL, SG ;

DAVISSON, PS ;

LEHENY, RF .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (05) :247-249

[2] GAAS/GA0.47IN0.53AS LATTICE-MISMATCHED SCHOTTKY-BARRIER GATES - INFLUENCE OF MISFIT DISLOCATIONS ON REVERSE LEAKAGE CURRENTS [J].

CHEN, CY ;

CHU, SNG ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1985, 46 (12) :1145-1147

[3] OPTICAL-PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON [J].

DEMICHELIS, F ;

MINETTIMEZZETTI, E ;

TAGLIAFERRO, A ;

TRESSO, E ;

RAVA, P ;

RAVINDRA, NM .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) :611-618

[4] SCHOTTKY-BARRIER HEIGHT OF N-INXGA1-XAS DIODES [J].

KAJIYAMA, K ;

MIZUSHIMA, Y ;

SAKATA, S .

APPLIED PHYSICS LETTERS, 1973, 23 (08) :458-459

[5] BARRIER HEIGHTS OF JUNCTIONS BETWEEN AMORPHOUS SI-GE-B AND CRYSTALLINE GAAS [J].

MURASE, K ;

AMEMIYA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1985, 24 (02) :192-199

[6] IN0.53GA0.47AS FETS WITH INSULATOR-ASSISTED SCHOTTKY GATES [J].

OCONNOR, P ;

PEARSALL, TP ;

CHENG, KY ;

CHO, AY ;

HWANG, JCM ;

ALAVI, K .

ELECTRON DEVICE LETTERS, 1982, 3 (03) :64-66

[7] 1ST LIFE-TEST RESULTS ON PLANAR P-I-N INGAAS/INP PHOTODIODES PASSIVATED WITH SIO2 OR SINX+ SIO2 OR SINX LAYERS [J].

RIPOCHE, G ;

DECOR, P ;

BLANJOT, C ;

BOURDON, B ;

SALSAC, P ;

DUDA, E .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) :631-633

[8] AMORPHOUS-SILICON GATE GAAS-FETS [J].

SUZUKI, M ;

MURASE, K ;

ASAI, K ;

KURUMADA, K .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (10) :358-359

[9]

TANAKA K, 1983, AMORPHOUS SEMICONDUC, V6, P85

[10] SCHOTTKY-BARRIER AMORPHOUS CRYSTALLINE INTERFACE FORMATION [J].

THOMPSON, MJ ;

NEMANICH, RJ ;

TSAI, CC .

SURFACE SCIENCE, 1983, 132 (1-3) :250-263

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