TWO-DIMENSIONAL SIMULATION OF SUBMICROMETER GAAS-MESFETS - SURFACE EFFECTS AND OPTIMIZATION OF RECESSED GATE STRUCTURES

被引：38

作者：

HELIODORE, F ^{[1
]}

LEFEBVRE, M ^{[1
]}

SALMER, G ^{[1
]}

ELSAYED, OL ^{[1
]}

机构：

[1] UNIV CAIRO,FAC ENGN,DEPT ELECTR & COMMUN,CAIRO,EGYPT

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 07期

关键词：

D O I：

10.1109/16.3332

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：824 / 830

页数：7

共 21 条

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[2]

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[4]

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[5]

CAPPY A, 1986, THESIS LILLE

[6] MODELING OF A SUBMICROMETER GATE FIELD-EFFECT TRANSISTOR INCLUDING EFFECTS OF NONSTATIONARY ELECTRON DYNAMICS [J].

CARNEZ, B ;

CAPPY, A ;

KASZYNSKI, A ;

CONSTANT, E ;

SALMER, G .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :784-790

[7]

CHEN CL, 1982, IEEE T ELECTRON DEV, V29, P1522, DOI 10.1109/T-ED.1982.20909

[8]

CONSTANT E, I PHYS C SERIES, V57, P141

[9]

Dumas J. M., 1985, 23rd Annual Proceedings Reliability Physics 1985 (Cat. No. 85CH2113-9), P39, DOI 10.1109/IRPS.1985.362072

[10]

ELGHAZALY S, 1984, INT PHYS C SERIES, V60, P127

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