EPR CHARACTERIZATION OF OPTICAL-QUALITY AGGAS2 GROWN FROM MELT

被引：19

作者：

VONBARDELEBEN, HJ ^{[1
]}

GOLTZENE, A ^{[1
]}

SCHWAB, C ^{[1
]}

FEIGELSON, RS ^{[1
]}

机构：

[1] STANFORD UNIV,CTR MAT RES,STANFORD,CA 94305

来源：

APPLIED PHYSICS LETTERS | 1978年 / 32卷 / 11期

关键词：

D O I：

10.1063/1.89906

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The EPR study of optical-quality AgGaS2 has proven the existence of the point defects Ni3+, Fen+, (n≤2), a shallow donor (ED<0.11 eV), and one associated defect Fe3+-X, the charge states of which are all photosensitive. The effectiveness of the standard annealing procedures, employed to obtain crystals of low absorption in the 0.5-12-μm range, is associated with an oxidation of these transition-metal impurities.

引用

页码：741 / 744

页数：4

共 18 条

[1]

BARDCLEBEN HJ, 1975, J APPL PHYS, V46, P1736

[2]

BARDELEBEN HJV, 1975, J PHYS, V36, pC3

[3] LINEAR AND NONLINEAR OPTICAL PROPERTIES OF AGGAS2, CUGAS2, AND CUINS2, AND THEORY OF WEDGE TECHNIQUE FOR MEASUREMENT OF NONLINEAR COEFFICIENTS [J].