MBE GROWTH OF INAS/ALINAS STRAINED-LAYER MULTI QUANTUM WELLS FOR OPTICAL-DEVICE APPLICATIONS

被引：6

作者：

MATSUSHIMA, Y

KATO, H

UTAKA, K

SAKAI, K

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(89)90385-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：210 / 214

页数：5

共 6 条

[1] INAS STRAINED-LAYER QUANTUM WELLS WITH BAND-GAPS IN THE 1.2-1.6 MU-M WAVELENGTH RANGE [J].

DEMIGUEL, JL ;

TAMARGO, MC ;

MEYNADIER, MH ;

NAHORY, RE ;

HWANG, DM .

APPLIED PHYSICS LETTERS, 1988, 52 (11) :892-894

[2] ROOM-TEMPERATURE CW OPERATION OF MBE-GROWN GAINAS/ALINAS MQW LASERS IN 1.5 MU-M RANGE [J].

MATSUSHIMA, Y ;

UTAKA, K ;

SAKAI, K ;

TAKEUCHI, O .

ELECTRONICS LETTERS, 1987, 23 (24) :1271-1273

[3] DEFECTS IN EPITAXIAL MULTILAYERS .1. MISFIT DISLOCATIONS [J].

MATTHEWS, JW ;

BLAKESLEE, AE .

JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :118-125

[4] OPTICAL INVESTIGATIONS OF THE BAND-STRUCTURE OF STRAINED INAS/ALLNAS QUANTUM WELLS [J].

MEYNADIER, MH ;

DEMIGUEL, JL ;

TAMARGO, MC ;

NAHORY, RE .

APPLIED PHYSICS LETTERS, 1988, 52 (04) :302-304

[5] EFFECTS OF COHERENCY STRAIN ON THE BAND-GAP OF PSEUDOMORPHIC INXGA1-XAS ON (001) INP [J].

PEOPLE, R .

APPLIED PHYSICS LETTERS, 1987, 50 (22) :1604-1606

[6] CALCULATION OF THE CONDUCTION-BAND DISCONTINUITY FOR GA0.47IN0.53AS-AL0.48IN0.52AS HETEROJUNCTION [J].

WELCH, DF ;

WICKS, GW ;

EASTMAN, LF .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) :3176-3179

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