HIGH-PRESSURE STUDIES OF RESONANT TUNNELING AND SUPERLATTICE PHENOMENA

被引：6

作者：

MAUDE, DK

FOSTER, TJ

EAVES, L

DAVIES, M

HENINI, M

HUGHES, OH

HEATH, M

机构：

[1] Dept. of Phys., Nottingham Univ.

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 06期

关键词：

D O I：

10.1088/0268-1242/6/6/002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hydrostatic pressure is used to investigate two types of device based upon the n-type GaAs/(AlGa)As material system: an asymmetric double barrier resonant tunnelling device and a device incorporating two superlattices separated by a single barrier. In the double barrier structure, the pressure-induced increase in GAMMA-X tunnelling and scattering reduces the build-up of electronic space charge in the GaAs quantum well. This allows us to study the transition from intrinsic bistability to ordinary negative differential conductivity in I(V). In the superlattice/barrier/superlattice structure we have evidence for a pressure-induced decrease in the free-electron density of the heavily doped n+ contact regions due to DX centres.

引用

页码：422 / 427

页数：6

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