VISUAL EFFECTS OF SWITCHING IN 0.15 AS-0.12 GE-0.73 TE GLASS

被引：2

作者：

ECKELS, DE

SIDLES, PH

DANIELSON, GC

机构：

[1] IOWA STATE UNIV, DEPT PHYS, AMES, IA 50010 USA

[2] ATOM ENERGY COMM, AMES LAB, AMES, IA 50010 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 07期

关键词：

D O I：

10.1063/1.1663716

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3005 / 3008

页数：4

共 16 条

[1]

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[2]

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[4] ELECTRICAL CONDUCTION AND SWITCHING IN AMORPHOUS SEMICONDUCTORS [J].

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APPLIED PHYSICS LETTERS, 1971, 18 (05) :198-&

[7] THERMAL EFFECTS IN AMORPHOUS-SEMICONDUCTOR SWITCHING [J].

KAPLAN, T ;

ADLER, D .

APPLIED PHYSICS LETTERS, 1971, 19 (10) :418-&

[8] ELECTRIC FIELD INDUCED MEMORY SWITCHING IN THIN FILMS OF CHALCOGENIDE SYSTEM GE-AS-SE [J].

PINTO, R ;

RAMANATHAN, KV .

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[9] SPECIFIC NEGATIVE RESISTANCE IN SOLIDS [J].

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[10] INSTABILITIES IN SEMICONDUCTING GLASS DIODES [J].

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APPLIED PHYSICS LETTERS, 1970, 16 (05) :212-+

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